Rozhkov, V. A. Antireflection and passivating coatings on the basis of rare earth element oxides for silicon devices [Text] / V. A. Rozhkov [и др. ] // Вестник Самарского государственного университета. - 2004. - N 4. - С. . 112-123. - RUMARS-vssu04_000_004_0112_1
Рубрики: Радиоэлектроника--Общие вопросы радиоэлектроники Кл.слова (ненормированные): кремний -- полупроводники -- окисные пленки Аннотация: In this research the optical properties of Rare Earth Elements' (REE) Oxide films, the antireflection effect on silicon surfaces and photoelectric transducers covered by these films, and the recombination properties of silicon, passivated by REE oxide films are studied. The investigations show that the deposition of a REE oxide film onto silicon surface decreases the spectral light reflection index from the surface of silicon down to 0. 01-1. 2%, increasing the spectral value of short-circuit photocurrent in a silicon photoelectric transducer more than by 50%. It is found out that after a deposition of a rare earth element oxide film the effective life-time of the non-equilibrium charge carriers, measured by means of photoconductivity relaxation method, increases 2-3 times. The surface recombination rate values for the interface silicon-rare earth element oxide are determined. Доп.точки доступа: Petrov, A. I.; Rodionov, M. A.; Shalimova, M. B. Нет сведений об экземплярах (Источник в БД не найден) |